8~12GHz 150W GaN MMIC

The HYPA08001200P52P from Haoyi Technologiess a GaN-on-SiC Power Amplifier that operates from 8000 to 12000 MHz. It provides an output power of 52 dBm (150 W),PAE of 40% and has a power gain of 24 dB under 50V power supply. This amplifier is designed using GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. It has fully-matched input and output ports for broadband performance and supports improved thermal handling based on a patented technology.All specs are tested under Pulse Mode.