Internally matched RF Power GaN HEMT

ALGH10S010M is an internally matched power transistor of Gallium Nitride (GaN) high electron mobility with an input and output impedance of 50 Ohms. The operating voltage of ALGH10S010M is 28V DC. It is a universal, multi-purpose and broadband solution in the field of radio frequency and microwave. GaN HEMT features high efficiency, high gain and broadband characteristics, making ALGH10S010M an ideal choice for linear and saturated amplifier circuits.