GaN on SiC HEMT
Category: Chip,Parts & Components
Model: ALGH60S025CE(S)
ALGH60S025CE(S) is an externally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The ALGH60S025CE(S), operating from a 28 voltages rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the ALGH60S025CE(S) ideal for linear and compressed amplifier circuits.